Phase-Change Technology and the Future of Main Memory

Authors:
Benjamin C. Lee;Ping Zhou;Jun Yang;Youtao Zhang;Bo Zhao;Engin Ipek;Onur Mutlu;Doug Burger
Affiliations:
Stanford University;University of Pittsburgh;University of Pittsburgh;University of Pittsburgh;University of Pittsburgh;University of Rochester;Carnegie Mellon University;Microsoft Research
Venue:
IEEE Micro
Year:
2010

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Abstract

Phase-change memory may enable continued scaling of main memories, but PCM has higher access latencies, incurs higher power costs, and wears out more quickly than DRAM. This article discusses how to mitigate these limitations through buffer sizing, row caching, write reduction, and wear leveling, to make PCM a viable DRAM alternative for scalable main memories.