Performance evaluation of PRAM for storage devices

Authors:
Seungcheol Ko;Jungsik Choi;Hwansoo Han
Affiliations:
Sungkyunkwan University, Suwon, Korea;Sungkyunkwan University, Suwon, Korea;Sungkyunkwan University, Suwon, Korea
Venue:
Proceedings of the 2012 ACM Research in Applied Computation Symposium
Year:
2012

Citing 5
Cited 0

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Abstract

Modern mobile devices such as smart phones and smart pads, have NAND as secondary device. PRAM has many advantageous characteristics over NAND --- low power consumption, fast write operation, no erase cost, and high endurance. Replacing NAND storages with PRAM devices will improve several features of mobile devices. In our paper, we evaluate PRAM replacement for NAND as backup storage devices. By using a fast simulation of PRAM, we evaluate various bus bandwidths and PRAM interfaces and compare performance with NAND storage. On PRAM storage devices in burst mode, a benchmark in SPEC CPU2006 performs better by up to 20% than NAND storage devices in page mode.