PREVAIL: electron projection technology approach for next-generation lithography

  • Authors:
  • R. S. Dhaliwal;W. A. Enichen;S. D. Golladay;M. S. Gordon;R. A. Kendall;J. E. Lieberman;H. C. Pfeiffer;D. J. Pinckney;C. F. Robinson;J. D. Rockrohr;W. Stickel;E. V. Tressler

  • Affiliations:
  • IBM Microelectronics Division, Semiconductor Research and Development Center, Hopewell Junction, New York;IBM Microelectronics Division, Semiconductor Research and Development Center, Hopewell Junction, New York;IBM Microelectronics Division, Semiconductor Research and Development Center, Hopewell Junction, New York;IBM Microelectronics Division, Semiconductor Research and Development Center, Hopewell Junction, New York;IBM Microelectronics Division, Semiconductor Research and Development Center, Hopewell Junction, New York;IBM Microelectronics Division, Semiconductor Research and Development Center, Hopewell Junction, New York;IBM Microelectronics Division, Semiconductor Research and Development Center, Hopewell Junction, New York;IBM Microelectronics Division, Semiconductor Research and Development Center, Hopewell Junction, New York;IBM Microelectronics Division, Semiconductor Research and Development Center, Hopewell Junction, New York;IBM Microelectronics Division, Semiconductor Research and Development Center, Hopewell Junction, New York;IBM Microelectronics Division, Semiconductor Research and Development Center, Hopewell Junction, New York;IBM Microelectronics Division, Semiconductor Research and Development Center, Hopewell Junction, New York

  • Venue:
  • IBM Journal of Research and Development
  • Year:
  • 2001

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Abstract

This paper is an overview of work in the IBM Microelectronics Division to extend electron-beam lithography technology to the projection level for use in next-generation lithography. The approach being explored--Projection Reduction Exposure with Variable Axis Immersion Lenses (PREVAIL)--combines the high exposure efficiency of massively parallel pixel projection with scanning-probe-forming systems to dynamically correct for aberrations. In contrast to optical lithography systems, electron-beam lithography systems are not diffraction-limited, and their ultimate attainable resolution is, for practical purposes, unlimited. However, their throughput has been--and continues to be--the major challenge in electron-beam lithography. The work described here, currently continuing, has been undertaken to address that challenge. Novel electron optical methods have been used and their feasibility ascertained by means of a Proof-Of-Concept (POC) system containing a Curvilinear Variable Axis Lens (CVAL) for achieving large-distance (20 mm at a reticle) beam scanning at a resolution of 2 section of the reticle. A production-level prototype PREVAIL system, an "alpha" system, for the 100-nm node has been under development jointly with the Nikon Corporation. At the writing of this paper, its electron-optics subsystem had been brought up to basic operation and was being prepared for integration with its mechanical and vacuum subsystem, under development at Nikon facilities.