A growth model for marketing evolution of multi-generation NAND flash memory

Authors:
Su-Yun Chiang;Yiming Li;Hsiao-Cheng Yu
Affiliations:
Institute of Management of Technology, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu City, Hsinchu 300, Taiwan.;Department of Electrical Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu City, Hsinchu 300, Taiwan.;Institute of Management of Technology, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu City, Hsinchu 300, Taiwan
Venue:
International Journal of Computational Science and Engineering
Year:
2010

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Abstract

Marketing growth of information-technology products is continuously sustained by semiconductor non-volatile memories. Flash memory plays a crucial role for mass storage of portable electronic systems. In this work, we study the marketing dynamics of flash memory using a growth model. The model considering non-uniform influence, asymmetric diffusion, and heterogeneity of the population of potential adaptors is solved and optimised numerically. Comparison between simulated and realistic data for NAND flash memory from 128 Mb to 1 Gbit verifies the theoretical findings. The results of this study could be advanced for forecasting new technologies of flash memory.