On the capacity of bounded rank modulation for flash memories

Authors:
Zhiying Wang;Anxiao Jiang;Jehoshua Bruck
Affiliations:
Electrical Engineering Department, California Institute of Technology, Pasadena, CA;Computer Science Department, Texas A&M University, College Station, TX;Electrical Engineering Department, California Institute of Technology, Pasadena, CA
Venue:
ISIT'09 Proceedings of the 2009 IEEE international conference on Symposium on Information Theory - Volume 2
Year:
2009

Citing 1
Cited 2

On the capacity of bounded rank modulation for flash memories

ISIT'09 Proceedings of the 2009 IEEE international conference on Symposium on Information Theory - Volume 2

On the capacity of bounded rank modulation for flash memories

ISIT'09 Proceedings of the 2009 IEEE international conference on Symposium on Information Theory - Volume 2
Correcting charge-constrained errors in the rank-modulation scheme

IEEE Transactions on Information Theory

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Abstract

Rank modulation has been recently introduced as a new information representation scheme for flash memories. Given the charge levels of a group of flash cells, sorting is used to induce a permutation, which in turn represents data. Motivated by the lower sorting complexity of smaller cell groups, we consider bounded rank modulation, where a sequence of permutations of given sizes are used to represent data. We study the capacity of bounded rank modulation under the condition that permutations can overlap for higher capacity.