RF characterization and modelling of high density Through Silicon Vias for 3D chip stacking

  • Authors:

  • L. Cadix;C. Bermond;C. Fuchs;A. Farcy;P. Leduc;L. DiCioccio;M. Assous;M. Rousseau;F. Lorut;L. L. Chapelon;B. Flechet;N. Sillon;P. Ancey

  • Affiliations:

  • STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France and Université de Savoie, IMEP-LAHC, 73376 Le Bourget du Lac Cedex, France;Université de Savoie, IMEP-LAHC, 73376 Le Bourget du Lac Cedex, France;CEA-Léti, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France;CEA-Léti, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;CEA-Léti, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;CEA-Léti, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France and CEA-Léti, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France;STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France;Université de Savoie, IMEP-LAHC, 73376 Le Bourget du Lac Cedex, France;CEA-Léti, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France

  • Venue:
  • Microelectronic Engineering
  • Year:
  • 2010

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Abstract

3D integration including Through Silicon Vias is more and more considered as the solution to overcome conventional 2D IC issues. In this way, TSV analytical equivalent models are hardly required to achieve 3D products and to make design recommendations. In this paper, a 3D process flow is detailed and used to integrate specific RF structures including copper-filled TSVs with 3@mm wide and 15@mm deep dimensions. Both measurements and simulations of these structures lead to the extraction of frequency-dependent parameters and the building of a SPICE compatible @p-shaped analytical parametrical model of the TSV.