CMOS voltage reference based on threshold voltage and thermal voltage

  • Authors:

  • Tien-Yu Lo;Chung-Chih Hung;Mohammed Ismail

  • Affiliations:

  • Analog Integrated Circuit Laboratory, Department of Communication Engineering, National Chiao Tung University, Hsinchu, Taiwan, ROC 300;Analog Integrated Circuit Laboratory, Department of Communication Engineering, National Chiao Tung University, Hsinchu, Taiwan, ROC 300;Analog VLSI Laboratory, Department of Electrical and Computer Engineering, The Ohio State University, Columbus, USA 43210

  • Venue:
  • Analog Integrated Circuits and Signal Processing
  • Year:
  • 2010

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Abstract

A fully CMOS based voltage reference circuit is presented in this paper. The voltage reference circuit uses the difference between gate-to-source voltages of two MOSFETs operating in the weak-inversion region to generate the voltage with positive temperature coefficient. The reference voltage can be obtained by combining this voltage difference and the extracted threshold voltage of a saturated MOSFET which has a negative temperature coefficient. This circuit, implemented in a standard 0.35-μm CMOS process, provides a nominal reference voltage of 1.361 V at 2-V supply voltage. Experimental results show that the temperature coefficient is 36.7 ppm/°C in the range from 驴20 to 100°C. It occupies 0.039 mm2 of active area and dissipates 82 μW at room temperature. With a 0.5-μF load capacitor, the measured noise density at 100 Hz and 100 kHz is 3.6 and $$ 2 5\,{\text{nV}}/\sqrt {\text{Hz}} , $$ respectively.