New design of RF rectifier for passive UHF RFID transponders

Authors:
Liu Dong-Sheng;Zou Xue-Cheng;Dai Kui;Li Si-Zheng;Hui Xue-Mei;Liu Yao;Tong Qiao-Ling
Affiliations:
Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
Venue:
Microelectronics Journal
Year:
2010

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Abstract

A novel diode-connected MOS transistor for ultra-high-frequency (UHF) micro-power rectifiers was presented, and a high efficiency N-stage charge pump voltage rectifier based on this new diode-connected MOS transistor was designed and implemented. The new diode-connected MOS transistor and the rectifier are designed and fabricated in SMIC 0.18-@mm 2P3M CMOS embedded EEPROM process. The structure design of the new diode achieved 315mV turn-on voltage, and 415nA reverse saturation leakage current. Compared with traditional rectifier, the rectifier using the presented diode-connected MOS has higher power conversion efficiency (PCE), higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the amplitude ranging from 0.8 to 1.8V, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.02V, and its ripple coefficients are less than 1%.