Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material

  • Authors:

  • Bo Liu;Zhitang Song;Songlin Feng;Bomy Chen

  • Affiliations:

  • Research Center of Functional Semiconductor Film Engineering and Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technol ...;Research Center of Functional Semiconductor Film Engineering and Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technol ...;Research Center of Functional Semiconductor Film Engineering and Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technol ...;Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA

  • Venue:
  • Microelectronic Engineering
  • Year:
  • 2005

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Abstract

Phase-change nonvolatile memory cell elements composed of Sb"2Te"3 chalcogenide have been fabricated by using the focused ion beam method. The contact size between the Sb"2Te"3 phase change film and electrode film in the cell element is 2826nm^2 (diameter: 60nm). The thickness of the Sb"2Te"3 chalcogenide film is 40nm. The threshold switching current of about 0.1mA was obtained. A RESET pulse width as short as 5ns and the SET pulse width as short as 22ns for Sb"2Te"3 chalcogenide can be obtained. At least 1000 cycle times with a RESET/SET resistance ratio 30 times is achieved for Sb"2Te"3 chalcogenide C-RAM cell element.