Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material
Microelectronic Engineering
Storage-class memory: the next storage system technology
IBM Journal of Research and Development
Overview of candidate device technologies for storage-class memory
IBM Journal of Research and Development
Architecting phase change memory as a scalable dram alternative
Proceedings of the 36th annual international symposium on Computer architecture
A durable and energy efficient main memory using phase change memory technology
Proceedings of the 36th annual international symposium on Computer architecture
Scalable high performance main memory system using phase-change memory technology
Proceedings of the 36th annual international symposium on Computer architecture
Better I/O through byte-addressable, persistent memory
Proceedings of the ACM SIGOPS 22nd symposium on Operating systems principles
Enhancing lifetime and security of PCM-based main memory with start-gap wear leveling
Proceedings of the 42nd Annual IEEE/ACM International Symposium on Microarchitecture
Proceedings of the 42nd Annual IEEE/ACM International Symposium on Microarchitecture
PCRAMsim: system-level performance, energy, and area modeling for phase-change ram
Proceedings of the 2009 International Conference on Computer-Aided Design
On the lifetime of multilevel memories
ISIT'09 Proceedings of the 2009 IEEE international conference on Symposium on Information Theory - Volume 2
FRASH: Exploiting storage class memory in hybrid file system for hierarchical storage
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Chalcogenide materials and their application to Non-Volatile Memories
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SCMFS: A File System for Storage Class Memory and its Extensions
ACM Transactions on Storage (TOS)
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Proceedings of the 1st Workshop on Interactions of NVM/FLASH with Operating Systems and Workloads
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Proceedings of the 1st Workshop on Interactions of NVM/FLASH with Operating Systems and Workloads
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FAST'14 Proceedings of the 12th USENIX conference on File and Storage Technologies
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Nonvolatile RAM using resistance contrast in phase-change materials [or phase-change RAM (PCRAM)] is a promising technology for future storage-class memory. However, such a technology can succeed only if it can scale smaller in size, given the increasingly tiny memory cells that are projected for future technology nodes (i.e., generations). We first discuss the critical aspects that may affect the scaling of PCRAM, including materials properties, power consumption during programming and read operations, thermal cross-talk between memory cells, and failure mechanisms. We then discuss experiments that directly address the scaling properties of the phase-change materials themselves, including studies of phase transitions in both nanoparticles and ultrathin films as a function of particle size and film thickness. This work in materials directly motivated the successful creation of a series of prototype PCRAM devices, which have been fabricated and tested at phase-change material cross-sections with extremely small dimensions as low as 3 nm × 20 nm. These device measurements provide a clear demonstration of the excellent scaling potential offered by this technology, and they are also consistent with the scaling behavior predicted by extensive device simulations. Finally, we discuss issues of device integration and cell design, manufacturability, and reliability.