Design considerations for variation tolerant multilevel CMOS/Nano memristor memory

  • Authors:

  • Harika Manem;Garrett S. Rose;Xiaoli He;Wei Wang

  • Affiliations:

  • Polytechnic Institute of NYU, Brooklyn, NY, USA;Polytechnic Institute of NYU, Brooklyn, NY, USA;University at Albany, Albany, NY, USA;University at Albany, Albany, NY, USA

  • Venue:
  • Proceedings of the 20th symposium on Great lakes symposium on VLSI
  • Year:
  • 2010

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Abstract

With technology migration into nano and molecular scales several hybrid CMOS/nano logic and memory architectures have been proposed thus far that aim to achieve high device density with low power consumption. The discovery of the memristor has further enabled the realization of denser nanoscale logic and memory systems. This work describes the design of such a multilevel memristor memory (MLMM) system, and the design constraints imposed in the realization of such a memory. In particular, the limitations on load, bank size, number of bits achievable per device, placed by the required noise margin (NM) for accurately reading the data stored in a device are analyzed.