Memristor-based memory: The sneak paths problem and solutions

Authors:
Mohammed Affan Zidan;Hossam Aly Hassan Fahmy;Muhammad Mustafa Hussain;Khaled Nabil Salama
Affiliations:
Electrical Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia;Electronics and Communication Department, Faculty of Engineering, Cairo University, Cairo, Egypt;Electrical Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia;Electrical Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Venue:
Microelectronics Journal
Year:
2013

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Abstract

In this paper, we investigate the read operation of memristor-based memories. We analyze the sneak paths problem and provide a noise margin metric to compare the various solutions proposed in the literature. We also analyze the power consumption associated with these solutions. Moreover, we study the effect of the aspect ratio of the memory array on the sneak paths. Finally, we introduce a new technique for solving the sneak paths problem by gating the memory cell using a three-terminal memistor device.