Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology

  • Authors:

  • Robert Chau;Justin Brask;Suman Datta;Gilbert Dewey;Mark Doczy;Brian Doyle;Jack Kavalieros;Ben Jin;Matthew Metz;Amlan Majumdar;Marko Radosavljevic

  • Affiliations:

  • Components Research, Technology and Manufacturing Group, Intel Corporation, Mail Stop RA3-252, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;Components Research, Technology and Manufacturing Group, Intel Corporation, Mail Stop RA3-252, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;Components Research, Technology and Manufacturing Group, Intel Corporation, Mail Stop RA3-252, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;Components Research, Technology and Manufacturing Group, Intel Corporation, Mail Stop RA3-252, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;Components Research, Technology and Manufacturing Group, Intel Corporation, Mail Stop RA3-252, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;Components Research, Technology and Manufacturing Group, Intel Corporation, Mail Stop RA3-252, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;Components Research, Technology and Manufacturing Group, Intel Corporation, Mail Stop RA3-252, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;Components Research, Technology and Manufacturing Group, Intel Corporation, Mail Stop RA3-252, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;Components Research, Technology and Manufacturing Group, Intel Corporation, Mail Stop RA3-252, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;Components Research, Technology and Manufacturing Group, Intel Corporation, Mail Stop RA3-252, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;Components Research, Technology and Manufacturing Group, Intel Corporation, Mail Stop RA3-252, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA

  • Venue:
  • Microelectronic Engineering
  • Year:
  • 2005

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Abstract

High-@k gate dielectrics and metal gate electrodes are required for enabling continued equivalent gate oxide thickness scaling, and hence high performance, and for controlling gate oxide leakage for both future silicon and emerging non-silicon nanoelectronic transistors. In addition, high-@k gate dielectrics and metal gates are required for the successful demonstration of high performance logic transistors on high-mobility non-silicon substrates with high I"O"N/I"O"F"F ratios.