Impact of Fowler-Nordheim and channel hot carrier stresses on MOSFETs with 2.2nm gate oxide

Authors:
S. Gerardin;A. Cester;A. Paccagnella;G. Ghidini
Affiliations:
Dipartimento di Ingegneria dell' Informazione, Universití di Padova, via Gradenigo 6a, Padova 35131, Italy and Istituto Nazionale per la Fisica della Materia INFM Unití di Padova, via Ma ...;Dipartimento di Ingegneria dell' Informazione, Universití di Padova, via Gradenigo 6a, Padova 35131, Italy and Istituto Nazionale per la Fisica della Materia INFM Unití di Padova, via Ma ...;Dipartimento di Ingegneria dell' Informazione, Universití di Padova, via Gradenigo 6a, Padova 35131, Italy and Istituto Nazionale per la Fisica della Materia INFM Unití di Padova, via Ma ...;ST Microelectronics, via Olivetti 2, Agrate Brianza 20041, Italy *Tel: +39-049-8277786
Venue:
Microelectronic Engineering
Year:
2005

Citing 2
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Hot carrier degradation and time-dependent dielectric breakdown in oxides

Proceedings of the third session on Reliability in VLSI circuits : operation, manufacturing and design: operation, manufacturing and design
Reliability limits for the gate insulator in CMOS technology

IBM Journal of Research and Development

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Abstract

We studied the degradation of NMOSFETs with 2.2nm gate oxide subjected to Fowler-Nordheim and channel hot carrier stresses. We highlighted the differences between the two types of stresses, in particular concerning the behavior of the gate current. Before hard breakdown, Fowler-Nordheim stressed devices showed pre-breakdown and/or soft-breakdown, while progressive breakdown was much more common with channel hot carrier stresses, especially at V"g"s=V"d"s/2. The impact of the stresses on the transfer and output characteristics of the devices was then considered. Finally, the effect of the degradation on adjacent, nominally identical MOSFETs was studied, showing potential issues for circuits that rely on matching.