Optimization of reactive ion etching processes using desirability

Authors:
Stephan Brabender;Klaus T. Kallis;Lars O. Keller;Remigius R. Poloczek;Horst L. Fiedler
Affiliations:
Faculty of Electrical Engineering and Information Technology, Intelligent Microsystems Institute, TU Dortmund, Emil-Figge-Str. 68, 44221 Dortmund, Germany;Faculty of Electrical Engineering and Information Technology, Intelligent Microsystems Institute, TU Dortmund, Emil-Figge-Str. 68, 44221 Dortmund, Germany;Faculty of Electrical Engineering and Information Technology, Intelligent Microsystems Institute, TU Dortmund, Emil-Figge-Str. 68, 44221 Dortmund, Germany;Faculty of Electrical Engineering and Information Technology, Intelligent Microsystems Institute, TU Dortmund, Emil-Figge-Str. 68, 44221 Dortmund, Germany;Faculty of Electrical Engineering and Information Technology, Intelligent Microsystems Institute, TU Dortmund, Emil-Figge-Str. 68, 44221 Dortmund, Germany
Venue:
Microelectronic Engineering
Year:
2010

Citing 3
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Abstract

This work discusses the potential of process optimization of reactive ion etching processes by the help of desirability. The idea is a model based approach due to the complexity of the chemical and physical operational sequence within the plasma during the etching. The whole etching process is considered as black box with input and output factors. Instead of searching for local optimums concerning the single process parameters during the conventional optimization a response surface methodology describes the black box by the help of an appropriate model with a desirability index which is afterwards optimized by the help of nonlinear optimization algorithms. The method is introduced and evaluated by using the example of a polysilicon etch process with the gases sulfur hexafluoride and oxygen.