Nondegeneracy conditions for active memristive circuits

  • Authors:
  • Ricardo Riaza

  • Affiliations:
  • Departamento de Matemática Aplicada a las Tecnologías de la Información, ETSI Telecomunicación, Universidad Politécnica de Madrid, Madrid, Spain

  • Venue:
  • IEEE Transactions on Circuits and Systems II: Express Briefs
  • Year:
  • 2010

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Abstract

This brief presents a characterization of nondegenerate circuits with active memristors, i.e., memristors with a negative memductance at certain operating ranges. The analysis proceeds by characterizing index-one configurations in several differential-algebraic models of active memristive circuits. We apply tree-based techniques to the analysis of nodal analysis models and then extend this approach to branch-oriented systems. Some examples illustrate the scope of our results.