Nonvolatile memristor memory: device characteristics and design implications
Proceedings of the 2009 International Conference on Computer-Aided Design
Fast statistical model of TiO2 thin-film memristor and design implication
Proceedings of the International Conference on Computer-Aided Design
Hardware realization of BSB recall function using memristor crossbar arrays
Proceedings of the 49th Annual Design Automation Conference
Statistical memristor modeling and case study in neuromorphic computing
Proceedings of the 49th Annual Design Automation Conference
The circuit realization of a neuromorphic computing system with memristor-based synapse design
ICONIP'12 Proceedings of the 19th international conference on Neural Information Processing - Volume Part I
Future memory and interconnect technologies
Proceedings of the Conference on Design, Automation and Test in Europe
Spintronic memristor based temperature sensor design with CMOS current reference
DATE '12 Proceedings of the Conference on Design, Automation and Test in Europe
DHeating: dispersed heating repair for self-healing NAND flash memory
Proceedings of the Ninth IEEE/ACM/IFIP International Conference on Hardware/Software Codesign and System Synthesis
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The memristor, known as the fourth basic two-terminal circuit element, has attracted many research interests since the first real device was developed by HP labs in 2008. The nano-scale memristive device has the potential to construct some novel computing systems because of its distinctive characters, such as non-volatility, non-linearity, low-power, and good scalability. These electrical characteristics of memristors are mainly determined by the material characteristic and the fabrication process. For example, process variations may cause the deviation of the actual electrical behavior of memristors from the original design and result in the malfunction of the device. Therefore, it is very important to understand and characterize the impact of process variations on the electrical behaviors of the memristor and its implication to the circuit design. In this paper, we analyze the impact of the geometry variations on the electrical characteristics of the memristor. Two parameters - NARD (Normalized Accumulative Resistance Deviation) and NAARD (Normalized Accumulative Absolute Resistance Deviation), are introduced to measure the fluctuation of the overall internal state (or the resistance) of a memristor under the impact of process variations. Based on our analysis, Monte-Carlo simulations are conducted to evaluate the device mismatch effects in the memristor-based memory.