Nonvolatile memristor memory: device characteristics and design implications

  • Authors:
  • Yenpo Ho;Garng M. Huang;Peng Li

  • Affiliations:
  • Texas A&M University, College Station, TX;Texas A&M University, College Station, TX;Texas A&M University, College Station, TX

  • Venue:
  • Proceedings of the 2009 International Conference on Computer-Aided Design
  • Year:
  • 2009

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Abstract

The search for new nonvolatile universal memories is propelled by the need for pushing power-efficient nanocomputing to the next higher level. As a potential contender for the next-generation memory technology of choice, the recently found "the missing fourth circuit element", memristor, has drawn a great deal of research interests. In this paper, we characterize the fundamental electrical properties of memristor devices by encapsulating them into a set of compact closed-form expressions. Our derivations provide valuable design insights and allow a deeper understanding of key design implications of memristor-based memories. In particular, we investigate the design of read and write circuits and analyze data integrity and noise-tolerance issues.