Characterization of line edge roughness and line width roughness of nano-scale typical structures
NEMS '09 Proceedings of the 2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
Nonvolatile memristor memory: device characteristics and design implications
Proceedings of the 2009 International Conference on Computer-Aided Design
Spintronic memristor devices and application
Proceedings of the Conference on Design, Automation and Test in Europe
Fast statistical model of TiO2 thin-film memristor and design implication
Proceedings of the International Conference on Computer-Aided Design
Nonvolatile Memories as the Data Storage System for Implantable ECG Recorder
ACM Journal on Emerging Technologies in Computing Systems (JETC) - Special Issue on Implantable Electronics
Hardware realization of BSB recall function using memristor crossbar arrays
Proceedings of the 49th Annual Design Automation Conference
Hi-index | 0.00 |
The fourth passive circuit element, memristor, has attracted increased attentions since the first real device was discovered by HP Lab in 2008. Its distinctive characteristic to record the historic profile of the voltage/current through itself creates great potentials in future system design. However, as a nano-scale device, memristor is facing great challenge on process variation control in the manufacturing. In this work, we analyze the impact of the geometry variations on the electrical properties of both TiO2 thin-film and spintronic memristors, including line edge roughness and thickness fluctuation. A simple algorithm was proposed to generate a large volume of geometry variation-aware three-dimensional device structures for Monte-Carlo simulations. Our simulation results show that due to the different physical mechanisms, TiO2 thin-film memristor and spintronic memristor demonstrate very different electrical characteristics even when exposing them to the same excitations and under the same process variation conditions.