Memristor PUFs: a new generation of memory-based physically unclonable functions

  • Authors:
  • Patrick Koeberl;Ünal Kocabaş;Ahmad-Reza Sadeghi

  • Affiliations:
  • Intel Collaborative Research Institute for Secure Computing, Darmstadt, Germany;TU Darmstadt/CASED, Darmstadt, Germany;Intel Collaborative Research Institute for Secure Computing, Darmstadt, Germany

  • Venue:
  • Proceedings of the Conference on Design, Automation and Test in Europe
  • Year:
  • 2013

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Abstract

Memristors are emerging as a potential candidate for next-generation memory technologies, promising to deliver non-volatility at performance and density targets which were previously the domain of SRAM and DRAM. Silicon Physically Unclonable Functions (PUFs) have been introduced as a relatively new security primitive which exploit manufacturing variation resulting from the IC fabrication process to uniquely fingerprint a device instance or generate device-specific cryptographic key material. While silicon PUFs have been proposed which build on traditional memory structures, in particular SRAM, in this paper we present a memristor-based PUF which utilizes a weak-write mechanism to obtain cell behaviour which is influenced by process variation and hence usable as a PUF response. Using a model-based approach we evaluate memristor PUFs under random process variations and present results on the performance of this new PUF variant.