Weak Write Test Mode: An SRAM Cell Stability Design for Test Technique
Proceedings of the IEEE International Test Conference on Test and Design Validity
Port Interference Faults in Two-Port Memories
ITC '99 Proceedings of the 1999 IEEE International Test Conference
Resistive-Open Defects in Embedded-SRAM Core Cells: Analysis and March Test Solution
ATS '04 Proceedings of the 13th Asian Test Symposium
Overview of candidate device technologies for storage-class memory
IBM Journal of Research and Development
Transition-metal-oxide-based resistance-change memories
IBM Journal of Research and Development
On Defect Oriented Testing for Hybrid CMOS/Memristor Memory
ATS '11 Proceedings of the 2011 Asian Test Symposium
Memristor PUFs: a new generation of memory-based physically unclonable functions
Proceedings of the Conference on Design, Automation and Test in Europe
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Resistive random access memory (RRAM) is one of the universal memory candidates for computer systems. Although RRAM promises many attractive advantages (e.g., huge data storage, smaller form-factor, lower power consumption, non-volatility, etc.), there are many open issues that still need to be solved, especially those related to its quality and reliability. For instance, open defects may cause RRAM cell to enter an undefined state (i.e., somewhere between logic 0 and 1), making it hard to detect during manufacturing test. As a consequence, this may lead to test escapes (quality issue) and field failures (reliability issue). This paper shows -- based on defect and circuit simulation -- how testing RRAM is different from testing conventional random access memories and how march test cannot guarantee higher defect coverage. The paper then motivates the need of development of special Design-for-Testability (DfT). A concept of a new DfT is then proposed. The concept is further exploited and mapped into two different DfT circuitries: (i) Short Write Time and (ii) Low Write Voltage. Both DfT schemes are implemented and simulated; the simulation results show that defects causing the RRAM cell to enter an undefined state are easily detected.