Defect Analysis and Defect Tolerant Design of Multi-port SRAMs
Journal of Electronic Testing: Theory and Applications
Analysis of Resistive Open Defects in Drowsy SRAM Cells
Journal of Electronic Testing: Theory and Applications
Genetic defect based march test generation for SRAM
EvoApplications'11 Proceedings of the 2011 international conference on Applications of evolutionary computation - Volume Part II
Detecting stability faults in sub-threshold SRAMs
Proceedings of the International Conference on Computer-Aided Design
Testing methodology of embedded DRAMs
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
DfT schemes for resistive open defects in RRAMs
DATE '12 Proceedings of the Conference on Design, Automation and Test in Europe
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In this paper we present an exhaustive analysis of resistive-open defect in core-cell of SRAM memories. These defects that appear more frequently in VDSM technologies induce a modification of the timing within the memory (delay faults). Among the faults induce by such resistive-open defects there are static and dynamic Read Destructive Fault (RDF), Deceptive Read Destructive Fault (DRDF), Incorrect Read Fault (IRF) and Transition Fault (TF). Each of them requires specific test conditions and different kind of March tests are needed to cover all these faults (TF, RDF, DRDF and IRF). In this paper, we show that a unique March test solution can ensure the complete coverage of all the faults induced by the resistive-open defects in the SRAM core-cells. This solution simplifies considerably the problem of delay fault testing in this part of SRAM memories.