Process and temperature compensation for RF low-noise amplifiers and mixers

Authors:
Didac Gómez;Milosz Sroka;José Luis González Jiménez
Affiliations:
Electronic Engineering Department, Universitat Politècnica de Catalunya, Barcelona, Spain;Digital Media SoC Department, Center for Semiconductor Research & Development, Toshiba Corporation, Kawasaki, Japan;Electronic Engineering Department, Universitat Politècnica de Catalunya, Barcelona, Spain
Venue:
IEEE Transactions on Circuits and Systems Part I: Regular Papers
Year:
2010

Citing 1
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Circuit Design of an On-Chip Temperature-Compensated Constant Transconductance Reference

Analog Integrated Circuits and Signal Processing

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Abstract

Temperature and process variations have become key issues in the design of integrated circuits using deep submicron technologies. In RF front-end circuitry, many characteristics must be compensated in order to maintain acceptable performance across all process corners and throughout the temperature range. This paper proposes a new technique consisting of a compensation circuit that adapts and generates the appropriate bias voltage for LNAs and mixers so that the variability with temperature and process corners of their main performance metrics (S-parameters, gain, noise figure, etc.) is minimized.