Circuit Design of an On-Chip Temperature-Compensated Constant Transconductance Reference

Authors:
Jiwei Chen;Bingxue Shi
Affiliations:
Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China, Tel.: +86-010-62784685-28, Fax: +86-010-62795104. chjw98@mails.tsinghua.edu.cn shibx@tsinghua.edu.cn
Venue:
Analog Integrated Circuits and Signal Processing
Year:
2003

Citing 1
Cited 1

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IEEE Transactions on Circuits and Systems Part I: Regular Papers

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Abstract

The transconductance of MOSFETS is very critical in analog integrated circuits, since it determines many important performance parameters such as gain, bandwidth, speed and noise. A novel on-chip temperature-compensated constant transconductance reference circuit is presented in this paper, which operates with a 1.8 V power supply and is implemented with a mixed-signal CMOS process. The transconductance of this circuit achieves a temperature coefficient of 136 ppm/°C over the temperature range of (−25°C, 125°C). Furthermore, this circuit also gives out a constant current reference realizing a temperature coefficient of 48 ppm/°C over the temperature range of (−25°C, 125°C). This circuit will finds popular applications in many kinds of CMOS analog integrated circuits.