Novel analysis and optimization of gm-boosted common-gate UWB LNA

Authors:
Muhammad Khurram;S. M. Rezaul Hasan
Affiliations:
Center for Research in Analog and VLSI micro system design, School of Engineering and Advanced Technology, Massey University, Albany, Auckland, NZ 0632, New Zealand;Center for Research in Analog and VLSI micro system design, School of Engineering and Advanced Technology, Massey University, Albany, Auckland, NZ 0632, New Zealand
Venue:
Microelectronics Journal
Year:
2011

Citing 1
Cited 1

Design of ultra-wideband low-noise amplifiers in 45-nm CMOS technology: comparison between planar bulk and SOI FinFET devices

IEEE Transactions on Circuits and Systems Part I: Regular Papers - Special issue on ISCAS2008

A full-band UWB common-gate band-pass noise matched gm-boosted series peaked CMOS differential LNA

Analog Integrated Circuits and Signal Processing

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Abstract

This paper focuses on the design optimization of g"m-boosted common gate (CG) CMOS low-noise amplifier (LNA) for ultra-wideband (UWB) wireless technology. In this regard, a detailed novel analysis of the UWB g"m-boosted CG amplifier topology is presented, which includes the finite g"d"s (=1/r"e"d"s) effects. For UWB systems, signal-to-noise ratio (SNR) can be defined as the matched filter bound (MFB). Using this definition, the noise performance of the UWB CG LNA in the presence of the g"m-boosting gain and the input noise-matching network are analyzed. It is found that the optimal noise factor of the UWB LNA collapses to the published narrowband g"m-boosted CG LNA noise factor when an assumption of narrowband is applied. It is also proved that the noise performance of the g"m-boosted UWB CG LNA is independent of the bandwidth of the input UWB signal. A new technique is presented for the design of optimal noise-matching network using passive components at the input of the UWB CG LNA. In this regard, role of the g"m-boosting stage and its effect on the SNR and the gain of the overall system are analyzed, and, in addition, its non-idealities are simulated in detail.