A full-band UWB common-gate band-pass noise matched gm-boosted series peaked CMOS differential LNA

Authors:
Muhammad Khurram;S. M. Rezaul Hasan
Affiliations:
Center for Research in Analog and VLSI microsystems dEsign (CRAVE), Massey University, Auckland, New Zealand and Department of Computer and Information Systems Engineering, NED University of Engin ...;Center for Research in Analog and VLSI microsystems dEsign (CRAVE), Massey University, Auckland, New Zealand
Venue:
Analog Integrated Circuits and Signal Processing
Year:
2013

Citing 6
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Novel analysis and optimization of gm-boosted common-gate UWB LNA

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A 3–5 GHz Current-Reuse $g_{m}$-Boosted CG LNA for Ultrawideband in 130 nm CMOS

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Abstract

This paper presents a low-power noise-matched fully-differential common-gate (CG) low noise amplifier (LNA) for ultrawideband receiver operating in the full 3.1---10.6 GHz band. Performance was optimized by employing the transconductance `g m ' boosted CG LNA topology with series peaking along with an input noise matching network. A common source g m -boosting amplifier, in conjunction with an LC T-network, was used to share the bias current with the CG stage. The LNA was demonstrated using a 130 nm IBM CMOS process technology and it consumed 7 mW from a 1 V supply. It exhibited an input return loss (S11) and an output return loss (S22) of 驴10.5 and 驴14 dB respectively. In addition, it also achieved a forward power gain (S21) of 14.5 dB and a noise figure between 4.5 and 5.0 dB.