22.7-db gain-19.7-dbm ICP1dB UWB CMOS LNA

Authors:
Domenico Pepe;Domenico Zito
Affiliations:
Department of Information Engineering, University of Pisa, Pisa, Italy;Department of Microelectronic Engineering, University College Cork, Cork, Ireland and Tyndall National Institute, Cork, Ireland and University of Pisa, Pisa, Italy
Venue:
IEEE Transactions on Circuits and Systems II: Express Briefs
Year:
2009

Citing 1
Cited 2

Feasibility study and design of a wearable system-on-a-chip pulse radar for contactless cardiopulmonary monitoring

International Journal of Telemedicine and Applications - Pervasive Health Care Services and Technologies

Measuring the uniqueness and variety of analog circuit design features

Integration, the VLSI Journal
A full-band UWB common-gate band-pass noise matched gm-boosted series peaked CMOS differential LNA

Analog Integrated Circuits and Signal Processing

Quantified Score

Hi-index	0.00

Visualization

Abstract

A fully differential CMOS ultrawideband low-noise amplifier (LNA) is presented. The LNA has been realized in a standard 90-nm CMOS technology aad consists of a common-gate stage and two subsequent common-source stages. The commongate input stage realizes a wideband input impedance matching to the source impedance of the receiver (i.e., the antenna), whereas the two subsequent common-source stages provide a wideband gain by exploiting RLC tanks. The measurements have exhibited a transducer gain of 22.7 dB at 5.2 GHz, a 4.9-GHz-Wide B3dB, an input refletion coefficient lower than -10.5 dB, and an input-referred 1-dB compression point of -19.7 dBm, which are in excellent agreement with the postlayout simulation results, confirming the approach validity and the design robustness.