Oxide roughness induced fluctuation effects in nanoscale MOSFET devices

  • Authors:

  • Petru Andrei

  • Affiliations:

  • Department of Electrical and Computer Engineering, Florida State University and Florida A&M University, Tallahassee, FL

  • Venue:
  • MINO'06 Proceedings of the 5th WSEAS international conference on Microelectronics, nanoelectronics, optoelectronics
  • Year:
  • 2006

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Abstract

Oxide roughness induced fluctuation effects in Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFET) are analyzed by using the linearization (perturbation) technique. The oxide thickness is considered a random variable in the framework of the transport equations and all fluctuating quantities are linearized around their average values. Numerical results for a MOSFET device with simplified structure are presented for the fluctuations of the terminal currents and threshold voltage. Quantum mechanical effects are taken into consideration by using the Density-Gradient model.