Random doping induced fluctuations in p-n junction diodes

  • Authors:

  • Liviu Oniciuc;Petru Andrei

  • Affiliations:

  • Department of Electrical and Computer Engineering, Florida State University and Florida A&M University, Tallahassee, FL, Romania;Department of Electrical and Computer Engineering, Florida State University and Florida A&M University, Tallahassee, FL, Romania

  • Venue:
  • ICECS'05 Proceedings of the 4th WSEAS international conference on Electronics, control and signal processing
  • Year:
  • 2005

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Abstract

Random doping induced fluctuations in p-n junction diodes are analyzed by using the linearization technique. The doping concentration is considered a random variable in the transport equations and all fluctuating quantities are linearized around their average values. Numerical results for a p-n junction diode with simplified structure are presented for the fluctuations of the terminal currents and small-signal parameters.