A 1-V, 16.9 ppm/°C, 250 nA switched-capacitor CMOS voltage reference

  • Authors:

  • Chun-Yu Hsieh;Hong-Wei Huang;Ke-Horng Chen

  • Affiliations:

  • Department of Electrical and Control Engineering, National Chiao Tung University, Hsinchu, Taiwan;RichTek Technology Corporation, Hsinchu, Taiwan;Department of Electrical and Control Engineering, National Chiao Tung University, Hsinchu, Taiwan

  • Venue:
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • Year:
  • 2011

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Abstract

An ultra low-power, precise voltage reference using a switched-capacitor technique in 0.35-µm CMOS is presented in this paper. The temperature dependence of the carrier mobility and channel length modulation effect can be effectively minimized by using 3.3 and 5V N-type transistors to operate in the saturation and subthreshold regions, respectively. In place of resistors, a precise reference voltage with flexible trimming capability is achieved by using capacitors. When the supply voltage is 1 V and the temperature is 80°C, the supply current is 250 nA. The line sensitivity is 0.76%/V; the PSRR is -41 dB at 100 Hz and -17 dB at 10 MHz. Moreover, the occupied die area is 0.049 mm2.