A novel surface potential-based short channel MOSFET model for circuit simulation

Authors:
Kan Jia;Weifeng Sun;Longxing Shi
Affiliations:
National ASIC System Engineering Research Center, Southeast University, Nanjing, Jiangsu 210096, PR China;National ASIC System Engineering Research Center, Southeast University, Nanjing, Jiangsu 210096, PR China;National ASIC System Engineering Research Center, Southeast University, Nanjing, Jiangsu 210096, PR China
Venue:
Microelectronics Journal
Year:
2011

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Abstract

In this paper a novel analytical approximation method for surface potential (@j"s) calculation in compact MOSFET model is presented. It achieves excellent accuracy and good calculation speed over all regions from accumulation to strong inversion. With this approximation method, a surface potential-based compact model for short channel MOSFET is developed. Comparison with measured data is also presented to validate the new model.