Proceedings of the 2001 Asia and South Pacific Design Automation Conference
MOSFET modeling for RF-CMOS design
Proceedings of the 2004 Asia and South Pacific Design Automation Conference
Fundamentals of next generation compact MOSFET models
SBCCI '05 Proceedings of the 18th annual symposium on Integrated circuits and system design
ASP-DAC '03 Proceedings of the 2003 Asia and South Pacific Design Automation Conference
Proceedings of the 2005 Asia and South Pacific Design Automation Conference
Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations
Mathematics and Computers in Simulation
A novel surface potential-based short channel MOSFET model for circuit simulation
Microelectronics Journal
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In this paper, we describe a complete MOSFET model developed for circuit simulation based on fully consistent physical concept. The model describes all transistor characteristics as a function of surface potentials, which are calculated iteratively at each applied voltage under the charge-sheet approximation. The key idea of this development is to put as much physics as possible into the equations describing the surface potentials. Since the model includes both the drift and the diffusion contributions, a single equation is valid from the subthreshold to the saturation regions. Contrary to the expectation, the results show that our semi-implicit model including the iteration procedures can even reduce the CPU time significantly in comparison with a conventional model similar to BSIM2 including short-channel effects. This is due to the consistent description of the model equations for all transistor characteristics, which results in more straightforward device equations, once the surface potentials have been computed