Towards automatic parameter extraction for surface-potential-based MOSFET models with the genetic algorithm

Authors:
Masahiro Murakawa;Mitiko Miura-Mattausch;Tetsuya Higuchi
Affiliations:
National Institute of Advanced Industrial Science and Technology (AIST), Japan;Hiroshima University, Japan;National Institute of Advanced Industrial Science and Technology (AIST), Japan
Venue:
Proceedings of the 2005 Asia and South Pacific Design Automation Conference
Year:
2005

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Abstract

In this paper, we present an automatic parameter extraction method with the GA (Genetic Algorithm) for surface-potential-based MOSFET models such as HiSIM (Hiroshima-university STARC IGFET Model). The method employs a two-stage extraction procedure operating on different sets of model parameters. Experimental results demonstrate that extraction of 34 parameters can be completed within 23 hours with PC (AthlonXP 2500), although this would typically take a human expert several days.