A 0.9-V, 7-mW UWB LNA for 3.1-10.6-GHz wireless applications in 0.18-µm CMOS technology

  • Authors:

  • Abdelhalim Slimane;M. Trabelsi;M. T. Belaroussi

  • Affiliations:

  • Electronics Department, Ecole Nationale Polytechnique d'Alger, 10, Avenue Hassen Badi, BP 182 El-Harrach, Algiers, Algeria and Microelectronic and Nanotechnology Division, Centre de Développe ...;Electronics Department, Ecole Nationale Polytechnique d'Alger, 10, Avenue Hassen Badi, BP 182 El-Harrach, Algiers, Algeria;Microelectronic and Nanotechnology Division, Centre de Développement des Technologies Avancées, 20 Aout 1956, Baba Hassan, Algiers, Algeria

  • Venue:
  • Microelectronics Journal
  • Year:
  • 2011

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Abstract

This paper presents a low-voltage and low-power CMOS low noise amplifier (LNA) for ultra-wideband (UWB) wireless applications. A cascade stage topology based on common source amplifier has been proposed to reduce the supply voltage of the proposed LNA. In addition, a high-pass filtering network is chosen instead of a Chebyshev band pass structure to simultaneously perform the wideband input matching and to improve the noise figure over the desired band. Using a 0.18@mm CMOS process, the proposed LNA exhibit a state of the art performance consuming only 7mW from a 0.9V supply voltage. Post-layout simulation results show a power gain S"2"1 of 13.5dB with gain ripple of +/-1.5dB, in the frequency range of 3.1-10.6GHz. The noise figure is below 4.6dB with a minimum of 2.7dB at 4.5GHz. The input and output return losses S"1"1 and S"2"2 are better than -9dB and -15dB, respectively. The highest value of IP3 is -8dBm obtained at 5GHz. The active silicon area occupied by the UWB-LNA is only 0.59mm^2.