Progress and outlook for STT-MRAM

Authors:
Yiming Huai;Yuchen Zhou;Ioan Tudosa;Roger Malmhall;Rajiv Ranjan;Jing Zhang
Affiliations:
Avalanche Technology, Fremont, CA;Avalanche Technology, Fremont, CA;Avalanche Technology, Fremont, CA;Avalanche Technology, Fremont, CA;Avalanche Technology, Fremont, CA;Avalanche Technology, Fremont, CA
Venue:
Proceedings of the International Conference on Computer-Aided Design
Year:
2011

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ADAMS: asymmetric differential STT-RAM cell structure for reliable and high-performance applications

Proceedings of the International Conference on Computer-Aided Design

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Abstract

New product applications have an increasing demand for a non-volatile memory (NVM) exhibiting higher speeds, extended endurance and lower power consumption as existing solutions are not fully capable to deliver on all of these attributes. Of the group of new NVMs, Phase-change RAM (PRAM), Resistive RAM (RRAM) and Spin-Transfer Torque based MRAM (STT-MRAM) [1-8], STT-MRAM has the most attractive combination of fast read and write speed (1015) along with non-volatility.