Fourier analysis of memristor excited by sinusoidal signal

Authors:
Viera Biolková;Dalibor Biolek;Zdeněk Kolka
Affiliations:
Depts. of Radioelectronics, Brno University of Technology, Czech Republic;Microelectronics, Brno University of Technology, Czech Republic and Dept. of EE, University of Defence Brno, Czech Republic;Depts. of Radioelectronics, Brno University of Technology, Czech Republic
Venue:
MMES'11/DEEE'11/COMATIA'11 Proceedings of the 2nd international conference on Mathematical Models for Engineering Science, and proceedings of the 2nd international conference on Development, Energy, Environment, Economics, and proceedings of the 2nd international conference on Communication and Management in Technological Innovation and Academic Globalization
Year:
2011

Citing 2
Cited 0

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Abstract

The paper deals with the analysis of flux-controlled memristor which is described by its unambiguous charge-flux constitutive relation. The memristor is excited by ideal sinusoidal voltage source in order to sense its typical i - v pinched hysteretic loop. Two equivalent schematics of the transformation of the exciting voltage into the current response are described. The first one is selected for the spectral analysis of the current. It is shown that the corresponding Fourier series contains only the sine terms. It confirms the fact that the pinched hysteretic loops of ideal memristors must be always odd-symmetrical.