Analytical modeling for 3D potential distribution of rectangular gate (RecG) gate-all-around (GAA) MOSFET in subthreshold and strong inversion regions

Authors:
Dheeraj Sharma;Santosh Kumar Vishvakarma
Affiliations:
Nanoscale Devices, VLSI/ULSI Circuit and System Design Lab., Electrical Engineering Discipline, School of Engineering, Indian Institute of Technology (IIT), Indore 452017, Madhya Pradesh, India;Nanoscale Devices, VLSI/ULSI Circuit and System Design Lab., Electrical Engineering Discipline, School of Engineering, Indian Institute of Technology (IIT), Indore 452017, Madhya Pradesh, India
Venue:
Microelectronics Journal
Year:
2012

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Abstract

In this paper, we have introduced an analytical subthreshold and strong inversion 3D potential model for rectangular gate (RecG) gate-all-around (GAA) MOSFET. The subthreshold and strong inversion potential distribution in channel region of a RecG MOSFET is obtained respectively by solving 3D Laplace and 3D Poisson equations. The assumed parabolic potential distribution along the z-axis in channel direction is appropriately matched with 3D device simulator after consideration of z-depended characteristic length in subthreshold region. For accurate estimation of short channel effects (SCE), the electrostatics near source and drain is corrected. The precise gate-to-gate potential distribution is obtained after consideration of higher order term in assumed parabolic potential profile. The model compares well with numerical data obtained from the 3D ATLAS as a device simulator and deckbuild as an interactive runtime of Silvaco Inc.