Limits of writing multivalued resistances in passive nanoelectronic crossbars used in neuromorphic circuits

Authors:
Arne Heittmann;Tobias G. Noll
Affiliations:
RWTH Aachen University, Aachen, Germany;RWTH Aachen University, Aachen, Germany
Venue:
Proceedings of the great lakes symposium on VLSI
Year:
2012

Citing 5
Cited 0

Analog VLSI: Circuits and Principles

Analog VLSI: Circuits and Principles
Synaptic Dynamics in Analog VLSI

Neural Computation
Compact models for memristors based on charge-flux constitutive relationships

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
On the Construction of Artificial Brains

On the Construction of Artificial Brains
Sensitivity of neuromorphic circuits using nanoelectronic resistive switches to pulse synchronization

Proceedings of the 21st edition of the great lakes symposium on Great lakes symposium on VLSI

Quantified Score

Hi-index	0.00

Visualization

Abstract

In this paper, limits of writing multivalued resistances in passive nanoelectronic crossbars are examined. The results are based on circuit simulation including device models for resistive switches based on the electrochemical metallization effect. The write operation is performed using a current mirror based on 40nm CMOS technology which operates in subthreshold mode. The results show that only sparsely coded pattern with low mutual overlap can be robustly brought into the matrix which limits the use of passive crossbar to applications that feature particular spatial distributions of resistive weights.