Compact models for memristors based on charge-flux constitutive relationships

Authors:
Sangho Shin;Kyungmin Kim;Sung-Mo Kang
Affiliations:
School of Engineering, University of California, Merced, CA;School of Engineering, University of California, Merced, CA;School of Engineering, University of California, Merced, CA
Venue:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Year:
2010

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Abstract

This paper introduces compact models for memristors. The models are developed based on the fundamental constitutive relationships between charge and flux of memristors. The modeling process, with a few simple steps, is introduced. For memristors with limited resistance ranges, a simple method to find their constitutive relationships is discussed, and examples of compact models are shown for both current-controlled and voltage-controlled memristors. Our models satisfy all of the memristor properties such as frequency dependent hysteresis behaviors and also unique boundary assurance to simulate memristors whether they behave memristively or resistively. Our models are implementable in circuit simulators, including SPICE, Verilog-A, and Spectre.