Analog VLSI: Circuits and Principles
Analog VLSI: Circuits and Principles
Compact models for memristors based on charge-flux constitutive relationships
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
FPGA Based on Integration of CMOS and RRAM
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
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One significant challenge in the design of nanoelectronic circuits which comprise resistive switches (RS) beyond 10 nm feature size is to control the variability and the irreproducibility of RS device conductance. For RS, which are based on the electrochemical metallization effect (ECM), this variability is - amongst others - caused by random discrete electrochemical reactions during the filament growth. Based on a physical model for ECM cells a 1D Monte Carlo circuit simulation model was derived which models the occurrence of individual electrochemical reactions by a Poisson process. By circuit simulation it was possible to show that the conductance variation during the filament growth can be controlled by a regulating device, which establishes a negative feedback on the electrochemical reaction rate. In particular, for three different load types (current source, linear resistor, and source coupled NMOS transistor) the regulating properties in regard to variability reduction (and partly observed in experiments) were shown by Monte Carlo simulation. It was especially possible to show that the obtained conductance variation appears to be the consequence of the respective dynamic joint interaction between RS and the regulating device and is -in turn- not a predetermined property of the RS alone.