A dual-phase compression mechanism for hybrid DRAM/PCM main memory architectures

  • Authors:
  • Seungcheol Baek;Hyung Gyu Lee;Chrysostomos Nicopoulos;Jongman Kim

  • Affiliations:
  • Georgia Institute of Technology, Atlanta, USA;Georgia Institute of Technology, Atlanta, USA;University of Cyprus, Nicosia, Cyprus;Georgia Institute of Technology, Atlanta, USA

  • Venue:
  • Proceedings of the great lakes symposium on VLSI
  • Year:
  • 2012

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Abstract

Phase-Change Memory (PCM) is emerging as a promising new memory technology, due to its inherent ability to scale deeply into the nanoscale regime. However, PCM is still marred by a duet of potentially show-stopping deficiencies: poor write performance and limited durability. These weaknesses have urged designers to develop various supporting architectural techniques to aid and complement the operation of the PCM, while mitigating its innate flaws. One promising such solution is the deployment of hybridized memory architectures that fuse DRAM and PCM, in order to combine the best attributes of each technology. In this paper, we introduce a Dual-Phase Compression (DPC) scheme specifically optimized for DRAM/PCM hybrid environments. Extensive simulations with traces from real applications running on a full-system simulator of a multicore system demonstrate 35.1% performance improvement and 29.3% energy reduction, on average, as compared to a baseline DRAM/PCM hybrid implementation.