Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter

Authors:
A. R. Brown;A. Asenov;J. R. Watling
Affiliations:
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, UK;-;-
Venue:
IEEE Transactions on Nanotechnology
Year:
2002

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Abstract

We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter. The employed "atomistic" drift-diffusion simulation approach includes quantum corrections based on the density gradient formalism. The quantum confinement and source-to-drain tunnelling effects are carefully calibrated in respect of self-consistent Poisson-Schrodinger and nonequilibrium Green's function simulations. Various sources of intrinsic parameter fluctuations, including random discrete dopants in the source/drain regions, single dopant or charged defect state in the channel region and gate line edge roughness, are studied in detail.