Performance simulation of nanoscale silicon rod field-effect transistor logic

Authors:
C. Dwyer;L. Vicci;R. M. Taylor
Affiliations:
Dept. of Comput. Sci., Univ. of North Carolina, Chapel Hill, NC, USA;-;-
Venue:
IEEE Transactions on Nanotechnology
Year:
2003

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The design of DNA self-assembled computing circuitry

IEEE Transactions on Very Large Scale Integration (VLSI) Systems - Nanoelectronic circuits and systems

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Abstract

We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (RG-FET) using the PISCES-IIb semiconductor drift-diffusion solver. The results from these simulations are used by a customized SPICE 3f5 kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a self-assembling fabrication technique that we outline.