Proceedings of the 45th annual Design Automation Conference
Characterization and modeling of graphene field-effect devices
Proceedings of the 2008 IEEE/ACM International Conference on Computer-Aided Design
The Predictive Technology Model in the Late Silicon Era and Beyond
Foundations and Trends in Electronic Design Automation
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The characterizations of carbon nanotube transistors at high frequencies have so far been hindered by large parasitic and extrinsic capacitances. We present a quantitative analysis of the limitations imposed by probe pad parasitics on single-wall carbon nanotube transistor characterization at gigahertz frequencies. Our analysis reveals the various kinds of frequency responses that can be expected to be measured. Furthermore, we present design guidelines and a suitable device layout to achieve gain and bandwidth at gigahertz frequencies