Read-out schemes for a CNTFET-based crossbar memory
Proceedings of the 20th symposium on Great lakes symposium on VLSI
Ultradense silicon nanowire arrays produced via top-down planar technology
Microelectronic Engineering
Security applications of diodes with unique current-voltage characteristics
FC'10 Proceedings of the 14th international conference on Financial Cryptography and Data Security
| Hi-index | 0.00 |
This paper investigates the behavior of large-scale crossbar memory arrays, built from molecular switches. We construct SPICE models based on experimental I(V) curves and investigate how critical circuit parameters (read-out margin, power dissipation, and speed) scale with circuit size. We concentrate on the read-out process. We explore the effect of nonlinear/rectifying elements placed at the junctions and conclude that scalable crossbar memories could be built using molecules with nonlinear, nonrectifying behavior in the molecular I(V) curve. The ultimate achievable storage capacity of these arrays is estimated and prescriptions for optimized molecular switches are provided.