Read-out schemes for a CNTFET-based crossbar memory

Authors:
Sheng Lin;Yong-Bin Kim;Fabrizio Lombardi
Affiliations:
Northeastern University, Boston, MA, USA;Northeastern University, Boston, MA, USA;Northeastern University, Boston, MA, USA
Venue:
Proceedings of the 20th symposium on Great lakes symposium on VLSI
Year:
2010

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Abstract

This paper investigates read-out schemes for a crossbar memory using CNTFET-based elements as cross-points. Two read-out schemes are presented in this paper; the first scheme biases the selected junction and measures the current flowing from the junction toward the ground while the second scheme involves biasing all other unselected bits and/or wordlines. Two figures of merit (the sense voltage on/off ratio and the sense current noise margin) are used to investigate the effectiveness of the proposed schemes for the CNTFET-based crossbar memory. Simulation results show that the CNTFET-based crossbar memory achieves improvements in both sense voltages on/off ratio and noise margin compared to the molecular memory implementation. Therefore, this paper demonstrates that these schemes make the CNTFET-based design a viable candidate for crossbar memory in the nanoscale era.