A low power tunable Gm---C filter based on double CMOS inverters in 0.35 μm

Authors:
Abbas Pirmohammadi;Mohammad Hossein Zarifi
Affiliations:
Department of Electrical and Computer Engineering, Ahar Branch, Islamic Azad University, Ahar, Iran;Nano and Bio Electronics Lab. (NBEL), Department of Electrical and Computer Engineering, Science and Research Branch, Islamic Azad University, Tabriz, Iran
Venue:
Analog Integrated Circuits and Signal Processing
Year:
2012

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Abstract

In this article, an inverter based transconductor using double CMOS pair is proposed for implementation of a second order lowpass Gm---C Filter. The proposed operational transconductance amplifier (OTA) and biquad filter are designed using standard 0.35 μm CMOS technology. Simulation results demonstrate the central frequency tunability from 10 kHz to 2.8 MHz which is suitable for the wireless specifications of Bluetooth (650 kHz), CDMA 2000 (700 kHz) and Wideband CDMA (2.2 MHz) applications. The power consumption of the filter is 445 nW and 178 μW at 10 kHz and 2.8 MHz from 3.3 V supply voltage, respectively. The active area occupied by the designed filter on the silicon is 215 脳 720 μm2. The proposed approach guarantees the upper bound on THD to be 驴40 dB for 300 mVpp signal swing. Employing the double CMOS pair in the inverters causes PSRR to reach 68.6 dB which is higher than similar works.