0.35V, 4.1μW, 39MHz crystal oscillator in 40nm CMOS

  • Authors:

  • Akira Saito;Yunfei Zheng;Kazunori Watanabe;Takayasu Sakurai;Makoto Takamiya

  • Affiliations:

  • Semiconductor Technology Academic Research Center, Yokohama, Japan;University of Tokyo, Tokyo, Japan;Semiconductor Technology Academic Research Center, Yokohama, Japan;University of Tokyo, Tokyo, Japan;University of Tokyo, Tokyo, Japan

  • Venue:
  • Proceedings of the 2012 ACM/IEEE international symposium on Low power electronics and design
  • Year:
  • 2012

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Abstract

A design methodology for sub-0.5V crystal oscillators is shown to realize an all-sub-0.5V ultra low power RF transceiver for wireless sensor networks. To reduce the minimum operating voltage (VDDmin) of the crystal oscillator, both the optimization of the gate width of the CMOS inverter in the crystal oscillator and the reduction in gate length by CMOS technology scaling are required. In accordance with the developed design methodology, a 39MHz crystal oscillator is designed and fabricated in a 40nm CMOS. The measured power consumption is 4.1μW at 0.35V and 39MHz, and the power supply voltage is the lowest among the previously reported crystal oscillators.