Prediction of Transient Induced by Neutron/Proton in CMOS Combinational Logic Cells
IOLTS '06 Proceedings of the 12th IEEE International Symposium on On-Line Testing
| Hi-index | 0.00 |
A simplified RC circuit is used to simulate effects of ionizing particles in a 90 nm SRAM. The main characteristics of the memory cell bit flip are discussed and a SEU criterion is presented. The effect of the surrounded circuit on the struck transistor is also discussed in order to extract parameters characteristic of the SEU occurrence.