Prediction of Transient Induced by Neutron/Proton in CMOS Combinational Logic Cells

Authors:
G. Hubert;A. Bougerol;F. Miller;N. Buard;L. Anghel;T. Carriere;F. Wrobel;R. Gaillard
Affiliations:
EADS, Corporate Research Center;EADS, Corporate Research Center;EADS, Corporate Research Center;EADS, Corporate Research Center;TIMA Laboratory;EADS, Space Transportation;University of Nice-Sophia Antipolis;INFODUC
Venue:
IOLTS '06 Proceedings of the 12th IEEE International Symposium on On-Line Testing
Year:
2006

Citing 0
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Abstract

This paper presents a new Monte-Carlo methodology to investigate the transient effect occurrence in Complementary Metal Oxide Semiconductor (CMOS) logic circuits: TMC DASIE (Transient Monte-Carlo Detailed Analysis of Secondary Ion Effects). The production and effects of Single-Event Transients inside CMOS combinational logic gates are examined. First results and perspectives are presented.